ULSI中Cu互连线的显微结构及可靠性  

Microstructure and Reliability of ULSI Copper Interconnects

作　　者：王晓冬[1] 吉元[1] 李志国[2] 卢振军[2] 夏洋[3] 刘丹敏[1] 肖卫强[1] 

机构地区：[1]北京工业大学材料科学工程学院,北京100022 [2]北京工业大学电子信息与控制工程学院,北京100022 [3]中国科学院微电子中心,北京100029

出　　处：《电子学报》2004年第8期1302-1304,共3页Acta Electronica Sinica

基　　金：国家自然科学基金 (No .699360 2 0 )

摘　　要：观察了ULSI中大马士革结构的Cu互连线的晶粒生长和晶体学取向 .分析了线宽及退火对Cu互连线显微结构及电徙动的影响 .Cu互连线的晶粒尺寸随着线宽的变窄而减小 .与平坦Cu膜相比 ,Cu互连线形成微小的晶粒和较弱的 (111)织构 .30 0℃、30min退火促使Cu互连线的晶粒长大、(111)织构发展 ,从而提高了Cu互连线抗电徙动的能力 .结果表明 ,Cu的扩散涉及晶界扩散与界面扩散 ,而对于较窄线宽的Cu互连线 ,界面扩散成为Cu互连线电徙动失效的主要扩散途径 .The grain growth and crystallographic orientation of the ULSI Cu interconnects within the Damascene architecture were observed. Microstructure of the Cu interconnect depending on linewidth and anneal temperature and impact on the electromigration (EM) were analyzed. The grain size of Cu lines shrinked as the linewidth was reduced. The small grains and the weaker (111) texture in Cu lines were formed compared with that in Cu blanket films. The EM resistance of the Cu metallization could be improved via the grain growth and the (111) texture developed during anneal at 3001 for 30 min. The results indicate that the Cu diffusion involves interface diffusion and boundary diffusion, while the diffusion along interface plays a dominant role in EM failure for Cu lines with the narrow linewidth.

关 键 词：Cu互连线 晶体学取向 晶粒尺寸 电徙动 

分 类 号：TN454[电子电信—微电子学与固体电子学]