脉冲直流PCVD制备Ti-Si-N薄膜的电化学腐蚀行为  

Electrochemical Corrosion of Ti-Si-N Films Coated by Pulsed-DC Plasma Enhanced CVD

作　　者：马大衍[1] 王昕[1] 马胜利[1] 徐可为[1] 

机构地区：[1]西安交通大学,陕西西安710049

出　　处：《稀有金属材料与工程》2004年第7期740-743,共4页Rare Metal Materials and Engineering

基　　金：国家"863"高技术项目(2001AA338010);国家自然科学基金重点资助项目(59931010)

摘　　要：用工业型脉冲等离子体增强化学气相沉积设备,在550℃的高速钢基材表面沉积由纳米晶TiN,纳米非晶Si3N4以及纳米或非晶TiSi2组成的复相薄膜.通过改变氯化物混合比例调节薄膜的成分.薄膜中的Si含量在0 at%～35 at%范围内变化.结果表明,当加入少量Si元素后,由于非晶相的产生,TiN薄膜的耐腐蚀性能显著提高,并在一定Si含量的薄膜中发生了负腐蚀现象.但由于Si的低导电性能,致使高硅含量薄膜颗粒粗大,因此更高Si含量薄膜的耐腐蚀性能又有所下降.Multiphase nanocomposite thin films composed of nanocrystalline TiN, nano-sized amorphous Si3N4, and occasionally amorphous or nanocrystalline TiSi2, were deposited on a high speed steel substrate at 550degreesC using an industrial pulsed-DC plasma-enhanced chemical vapor deposition technique. The composition of the films could be controlled well by adjusting the mixing ratio of the chlorides. The Si content in the films varied in a range of 0similar to35at%. The corrosion resistant properties of TiN coatings were significantly increased with certain additions of Si because of appearance of amorphous phase. It was found that negative corrosion occurred when the Si content is 13at% and 20at%. There was a much lower corrosion resistance in higher Si content films because the low conductivity of Si during the formation of the coating resulted in particle coarsening.

关 键 词：PCVD TI-SI-N 非晶 耐腐蚀性 

分 类 号：TG174[金属学及工艺—金属表面处理]