多孔硅发光二极管的载流子传输特性研究  

Carrier Transportation Properties of PS LED

作　　者：倪梦莹[1] 李清山[1] 李媛媛[1] 王会新[1] 曹小龙[1] 

机构地区：[1]曲阜师范大学物理系,山东曲阜273165

出　　处：《液晶与显示》2004年第4期308-312,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：山东省自然科学基金资助项目(No.Y2002A09)

摘　　要：制备Al/多孔硅/c Si/Al结构的多孔硅发光二极管,利用其I V特性关系,以及在不同温度下其I V特性的变化,结合多孔硅的特殊微结构及性质,分析了多孔硅发光二极管中载流子的产生和传输过程;通过比较其发光猝灭前后I V特性的变化,解释了发光猝灭的原因。提出了如果在低电场下能够实现大量载流子在限制性Si微粒中复合,是提高多孔硅电致发光效率的一个途径。The electroluminescence of porous silicon has attracted much interest for its potentiality in the integration of photoelectricity, but the efficiency is so low that it can not reach the demand of application now. The author studied the I-V characteristics of PS LED and the change of I-V characteristics at different temperature, found the difference of I-V characteristics before and after luminescence quenching. Utilizing the peculiar micro-structure and properties, the carrier generation and transportation mechanisms was analyzed. The causes of low luminescence efficiency and luminescence quenching were explained. It is shown that the EL efficiency of PS could be improved if we could realize the carrier compound in quantum confinement Si granule at low-bias.

关 键 词：发光二极管 多孔硅 I-V特性 电致发光 

分 类 号：TN312.8[电子电信—物理电子学]