半导体材料的激光辐照效应计算和损伤阈值分析  

Calculation of Laser Irradiation Effect and Analysis of Laser-Induced Damage Threshold in Semiconductor

作　　者：段晓峰[1] 牛燕雄[1] 张雏[1] 

机构地区：[1]军械工程学院光学与电子工程系,石家庄050003

出　　处：《光学学报》2004年第8期1057-1061,共5页Acta Optica Sinica

摘　　要：在激光对抗中 ,探测器容易受到激光损伤 ,为此研究了连续强激光对半导体材料的损伤机理 ,建立了氧碘化学激光器辐照InSb圆板型靶材的二维物理模型。在圆柱坐标系中利用积分变换法 ,求解热传导和热弹性力学方程组 ,得到由激光辐照引起的温度场和热应力场的瞬态分布。经过严格的理论分析 ,计算出InSb材料的激光破坏阈值 ,讨论了不同的辐照时间和光斑半径对破坏阈值的影响。研究发现其破坏形态为熔融破坏 ,一般不会出现解理或炸裂现象 ,这一结果与相关实验报道一致。最后分析了与温度有关的非线性参量对损伤阈值的影响。Detectors are easy to be damaged by las er irradiation during optoelectronic countermeasures. Damage mechanism of semicond uctor induced by high-power continuous-wave laser is investigated. The two-di mensional physical model that chemical oxygen-iodine laser (COIL) irradiates a disk target of InSb is established. The equations of heat conduction and thermoe lastic dynamics are solved through integral-transform method in circular cylind rical coordinates. Transient distribution of temperature field and thermal stres s field is described. The damage threshold of InSb is calculated, which is relat ed to irradiation time and beam radius. The damage morphology of InSb is proved to be ablation, but no cleavage burst appears. It is in accordance with practice . The influence of temperature-related nonlinear parameter on damage threshold is analyzed.

关 键 词：激光物理 激光辐照效应 温度场 应力场 损伤阈值 非线性效应 

分 类 号：O437[机械工程—光学工程]