聚酰亚胺薄膜受γ射线作用后的电性能变化  

VARIATION OF ELECTRICAL PROPERTIES OF POLYIMIDE FILMS IRRADIATED BYγ-RAY

作　　者：王玉芬[1] 邱梅[1] 曹晓珑[1] 张承伟[1] 刘耀南[1] 钱德丰[2] 

机构地区：[1]西安交通大学绝缘教研室,西安710049 [2]西北核技术研究所西安辐照研究中心

出　　处：《高分子材料科学与工程》1993年第5期16-20,共5页Polymer Materials Science & Engineering

摘　　要：研究了聚酰亚胺薄膜受Υ射线作用前后的电性能变化。实验发现,在10～10~5Gy的吸收剂量范围内,薄膜受辐照后体积电阻率下降,介电常数基本不变,高频介质损耗角正切上升,交流击穿场强上升。通过分析和讨论,笔者认为薄膜电性能的这些变化是由辐照过程中薄膜同时发生交联和裂解所引起的。The variations of electrical properties of γ- ray irradiated polyimide films are studies in this paper. It is found that the bulk resistivity, dielectric dissipation factor and ac breakdown strength change with the dose while the permittivity keeps constant within the radiation absorbed doses from 10 to 105 Gy. Analyzing the results reveals that these changes are caused by crosslinking and degradation during the irradiation.

关 键 词：Γ射线 辐照 聚酰亚胺 薄膜 

分 类 号：TM215.3[一般工业技术—材料科学与工程]