In离子在掺杂LiNbO_3晶体中的占位研究  

LOCATION OF In IONS IN DOPED LiNbO_3 CRYSTALS

作　　者：徐悟生[1] 许士文[1] 李宣东[2] 王岩[2] 徐玉恒[2] 

机构地区：[1]哈尔滨工业大学电子科学与技术系,哈尔滨150001 [2]哈尔滨工业大学应用化学系,哈尔滨150001

出　　处：《硅酸盐学报》2004年第5期603-607,共5页Journal of The Chinese Ceramic Society

基　　金：国家高技术研究发展863计划项目(8632001AA31304);国家重点基础研究973计划项目(G19990330).

摘　　要：测量了掺In系列LiNbO3晶体的吸收光谱和红外透射光谱,研究了In离子在掺In系列的固液同成分配比LiNbO3晶体中的占位情况。在In3+的掺入量低于阈值3%(摩尔分数)时,In离子占据NbLi4+位;在掺入量高于阈值3%时,In3+占据NbNb位和LiLi位。利用光斑畸变法得到掺In系列LiNbO3晶体的抗光损伤能力,发现在In3+掺入量高于阈值3%时的抗光损伤能力增强,比掺入量低于阈值的晶体高1～3个数量级。通过In3+的占位情况讨论了In系列掺杂LiNbO3晶体抗光损伤能力增强的机理。The location of In ions in In-doped series LiNbO3 was investigated by means of the absorption spectra and infrared transmission spectra measured. Results show that In ions take NbLi4+ site when the doping concentration of In3+ is under its threshold of 3% (molar fraction) and In ions take NbNb and LiLi sites when the doping concentration is over the threshold. The value of photodamage resistance ability of In-doped series LiNbO3 crystals was obtained by the facula distortion method. It is found that the photodamage resistance ability of In-doped series LiNbO3 is enhanced significantly when the doping concentration of In3+ is 3% (molar fraction), higher than its threshold, and the value is 1-3 orders of magnitude higher than that of the crystals doped with the In concentration under the threshold. The mechanism of the photodamage resistance enhancement of In-doped series NiNbO3 was discussed via the In3+ location in the crystals.

关 键 词：掺杂铌酸锂晶体 吸收光谱 红外透射光谱 光损伤 

分 类 号：O734[理学—晶体学]