光探测器芯片的高频特性测量  

Measuring the High-Frequency Characteristics of Chip Photodiodes

作　　者：张胜利[1] 孙建伟[1] 刘宇[1] 祝宁华[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《中国激光》2004年第7期857-860,共4页Chinese Journal of Lasers

基　　金：国家 8 6 3计划 (2 0 0 1AA312 0 30;2 0 0 1AA312 2 90 );国家 973计划 (G2 0 0 0 0 36 6 0 1);国家杰出青年基金(6 982 5 10 9)资助项目

摘　　要：为了克服用共面探针测量光探测器芯片的高频特性对电极结构的限制 ,提出了一种精确测量光探测器芯片的阻抗和频率响应的新方法。对于任意电极结构的探测器芯片 ,首先把芯片与测试夹具连接 ,通过一系列的校准和测量 ,可以得到夹具的S参数 ,进而利用微波理论扣除整个测试夹具的影响 ,得到探测器芯片的S参数 ,计算出光探测器的阻抗和频率响应特性。用该方法对P极和N极共面的光探测器芯片的阻抗和频率响应特性进行了测量 ,并与直接用微波探针测量的结果相比较 ,验证了该方法在 5 0MHz～ 16GHz的频率范围内的正确性。An accurate measurement technique for the impedance and modulation frequency response of photodiodes is presented. In the measurement, the photodiode is mounted on a submount, and bond wires are used to connect the electrodes of chip. The test fixture consists of a microwave probe, a submount, and bond wires, and their scattering parameter can be attained by some accurate measurements. So the intrinsic characteristics of chips can be obtained by completely removing the effect of test fixture using microwave network theory and overcome the dependency on the electrode figures in conventional methods. Experimental results for a photodiode with coplanar electrodes demonstrate the validity of the proposed technique in the region 50 MHz～16 GHz.

关 键 词：光电子学 光探测器 微波网络分析仪 频率响应 

分 类 号：TN29[电子电信—物理电子学]