电化学组装一维纳米线阵列温差电材料  

Electrochemically Assembled Nanowire Array Thermoelectric Materials

作　　者：王为[1] 贾法龙[1] 巩运兰[2] 王惠[3] 张伟玲[1] 

机构地区：[1]天津大学化工学院,天津300072 [2]天津商学院工学院,天津300134 [3]天津大学分析中心,天津300072

出　　处：《天津大学学报（自然科学与工程技术版）》2004年第8期659-662,共4页Journal of Tianjin University：Science and Technology

基　　金：国家自然科学基金资助项目(50071040).

摘　　要：低维温差电材料具有比块状温差电材料更高的优值,因而研制具有纳米线阵列结构的温差电材料对于提高材料的温差电转换效率具有重要意义.以具有纳米孔阵列结构的氧化铝多孔模板为阴极,在含有Bi+3、HTeO2+1的酸性溶液中,采用直流电沉积技术,通过在氧化铝多孔模板的纳米级微孔中沉积铋和碲,实现了一维纳米线阵列铋碲温差电材料的电化学组装.环境扫描电子显微镜(ESEM)和透射电子显微镜(TEM)的分折表明,电化学组装出的铋碲纳米线分布均匀,形状规则.铋碲纳米线的组成可方便地通过调整电沉积电位加以控制.It has been theoretically verified that thermoelectric nanowires have a strongly increased figure of merit over bulk material. The fabrication of thermoelectric nanowire is very important for the further improvement of the heat-electricity conversion efficiency of thermoelectric materials. Nanowire array thermoelectric materials can be fabricated by DC electrodeposition technology with the anodizing porous alumina template as ca-(thode) in the solution containing such elements as bismuth and tellurium. The environmental scanning electronic microscope(ESEM) analysis showed that the nanowires in the nanowire array thermoelectric materials possess regular shape and uniform distribution, and the transmission electronic microscope(TEM) analysis indicated that the electrochemically assembled nanowire arrays are composed of elements bismuth and tellurium, and their doping concentration can be easily controlled by adjusting the electrodepositing potential. Both n-type and p-type nanowire array thermoelectric materials can be prepared by electrodeposition technology.

关 键 词：电化学组装 低维温差电材料 铋碲纳米线阵列 直流电沉积 透射电子显微镜 

分 类 号：TN377[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]