长余辉(寿命)发光材料研究的最新进展  

New Development of Long Afterglow Phosphorescent Materials

作　　者：施朝淑[1,3] 戚泽明[2] 

机构地区：[1]中国科学技术大学中科院结构研究实验室 [2]中国科学技术大学国家同步辐射实验室,合肥230029 [3]中国科学技术大学物理系

出　　处：《无机材料学报》2004年第5期961-969,共9页Journal of Inorganic Materials

基　　金：863计划资助项目(2002AA324060);国家自然科学基金(90201019)

摘　　要：综述了近几年来长余辉发光材料研究的最新进展,包括三方面:新材料研制,新应用领域的开拓和发光机理研究的模型.材料方面,主要介绍了红光、蓝光研究的进展与获得长余辉发光的关键因素-结构缺陷形成的陷阱态,以及稀土掺杂的作用.为促进新材料的研究着重概述了对长余辉发光机理研究的新进展,除了载流子传输与隧穿效应外,还介绍了两种最新观点;双光子吸收与VK中心模型,并对其存在的问题作了评述.应用方面,除了已有的弱光照明与显示领域外,还在向光电信息功能,特别是二维图像存储,高能粒子射线探测方面发展.The most recent progress of long afterglow phosphorescent materials on new material design, new application and luminescence mechanism were reviewed. The development of red and blue materials, the key factor to obtain long afterglow-structure defects and the effect of doped rare earth ions were introduced. For promoting new material research, the progress of mechanism research was emphasized. Besides carrier transport and tunneling effect models, two new models-two photons absorption and V-K center were introduced. Long afterglow materials are widely used to illuminate and display in weak light environment and their application is being expanded to optoelectronic material area, especially as two dimensions of image storage and detector of high energy ray.

关 键 词：长余辉(寿命) 缺陷 发光 

分 类 号：O482[理学—固体物理]