掺镁近化学计量比LiNbO_3晶体的生长  

Growth of Mg-doped Near Stoichiometric LiNbO_3 Crystal

作　　者：王海丽[1] 杭寅[1] 张连瀚[1] 祝世宁[2] 徐军[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800 [2]南京大学固体微结构国家重点实验室,南京210093

出　　处：《无机材料学报》2004年第5期1191-1194,共4页Journal of Inorganic Materials

基　　金：国家高技术发展计划(863)资助(2002AA311090)

摘　　要：利用提拉法,从掺入11mol％KzO和1mol％MgO的化学配比LiNbO3熔体中生长了高质量的掺镁近化学计量比LiNbO3晶体.与同成分LiNbO3晶体相比,紫外吸收边发生明显蓝移,OH-红外吸收峰的位置和波形也发生了显著的变化,初步断定晶体中Mg2+的掺杂浓度已达到抗光伤阈值浓度.酸腐蚀结果表明,晶体具有区域性单畴结构.A kind of Mg-doped near stoichiometric LiNbO3 crystal was grown with Czochralski method from a stoichiometric melt with addition of 11mol% K2O and 1mol% MgO. Compared with congruent LiNbO3 crystal, its ultraviolet absorption edge shifts towards short wavelength and the location and shape of the OH- infrared absorption band also change distinctly, so that the Mg2+ doping concentration can be considered as having reached the optical damage resistant threshold concentration. Acid etching result shows that the crystal has regional single domain structure.

关 键 词：LINBO3晶体 近化学计量比 吸收光谱 畴结构 

分 类 号：O782[理学—晶体学]