SrTiO_3陶瓷晶界层电容器材料的晶界研究——Ⅰ.晶界结构  

STUDY ON GRAIN BOUNDARY OF SrTiO_3 GBBL CAPACITORS Ⅰ.GRAIN BOUNDARY STRUCTURE

作　　者：宋祥云[1] 徐保民[1] 温树林[1] 王鸿[2] 殷之文[1] 

机构地区：[1]中国科学院上海硅酸盐研究所 [2]上海科学技术大学材料科学系

出　　处：《硅酸盐学报》1993年第4期333-338,共6页Journal of The Chinese Ceramic Society

摘　　要：利用高分辨电镜研究了低温一次烧结SrTiO_3陶瓷晶界层电容器材料的晶界结构,发现在西晶粒间存在着4种典型的晶界类型。通过构筑晶界形成的结构模型,揭示了两晶粒间晶界形成的特征,认为两晶粒间晶界相的形成既与两晶粒间的液相成份和杂质组成有关,亦与两晶粒的相对取向有关。此外,还与两次烧结SrTiO_3陶瓷晶界层电容器材料的晶界结构作了比较。The grain boundary structure of SrTiO_3 GBBL (grain boundary barrier layer) capacitors sintered at low temperature in one-step was studied by means of HREM (high resolution electron microscopy). Four types of grain boundary were found and the atomic structural model of grain boundary was formulated, showing the formation characteristics of grain boundary. It is proposed that the formation of intergranular phase is not only related to the composition and distribution of the reactive liquid phase and dopants between the two grains, but also related to the relative orientation of the two grains. Besides, the grain boundary structure of the SrTiO_3 GBBL capacitors was compared with that of the ordinary SrTiO_3 GBBL capacitors, sintered in two-step.

关 键 词：钛酸锶 陶瓷 晶界 电容器 结构 

分 类 号：TQ174.754[化学工程—陶瓷工业]