化学气相沉积法生长透明硒化锌多晶  

GROWTH OF TRANSPARENT POLYCRYSTAL ZINC SELENIDE BY CHEMICAL VAPOR DEPOSITION

作　　者：杨曜源 方珍意 蔡以超 王向阳 张力强 肖红涛 田鸿昌 东艳萍 李卫 郝永亮 

机构地区：[1]人工晶体研究院,北京100018

出　　处：《硅酸盐学报》2004年第8期946-949,共4页Journal of The Chinese Ceramic Society

基　　金："十五"国家攻关项目

摘　　要：采用化学气相沉积 (CVD)法 ,在ZnSeH2 -Ar体系中生长了用于红外光学窗口的ZnSe透明多晶体。测定了ZnSe样品的XRD谱和红外透过光谱 ,用光学显微镜观察了样品的显微形貌 ;讨论了CVD工艺中生长参数对ZnSe晶体质量的影响。研究结果表明 :通过优化的生长工艺 ,生长温度在 5 0 0～ 75 0℃ ,压力在 10 0～ 15 0 0Pa的范围内 ,可以制备出高质量ZnSe多晶体 ;在 8～ 12 μm波段范围内 ,其红外透过率达70 %以上。The transparent ZnSe polycrystals, which are suitable to be used as monolithic infrared optical windows, were prepared by chemical vapor deposition (CVD) in Zn-Se-H2-Ar system. The XRD and infrared transmission spectra were determined respectively, and the surface micrographs of ZnSe samples prepared were observed by optical microscope. Effects of some growth parameters on the quality of ZnSe crystal samples obtained by CVD method were discussed. The results show that the ZnSe polycrystals with high quality can be obtained under the optimized conditions, such as growth temperature of 500-750°C and the pressure of 100-1500 Pa. The infrared transmittance of ZnSe crystals obtained in wavelength 8-12 μm range reaches to 70%.

关 键 词：硒化锌 化学气相沉积法 红外晶体 

分 类 号：O785[理学—晶体学]