锗酸盐晶体的坩埚下降法生长研究  

BRIDGMAN GROWTH OF GERMANATE SINGLE CRYSTALS

作　　者：徐家跃[1] 武安华[1] 吴宪君[1] 陈红兵[2] 丁嘉宣[1] 周娟[1] 廖晶莹[1] 范世(马岂)[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050 [2]宁波大学固体材料研究所

出　　处：《陕西科技大学学报（自然科学版）》2004年第5期92-99,共8页Journal of Shaanxi University of Science & Technology

摘　　要：锗酸盐晶体是一类重要的功能晶体材料。其中,Bi4Ge3O12(BGO)是一种优良的闪烁 晶体,广泛应用于高能物理、地质勘察和医疗成像等领域;Sr3Ga2Ge4O14(SGG)是重要的压电 晶体,作为基片材料可以制作高性能的声表面波(SAW)器件,在移动通讯、高温探测等方面有 良好的应用前景;Pb5Ge3O11(PGO)晶体具有小的介点常数和比较大的热释电系数,被认为是 优秀的热释电探测器材料,而其旋光性则可应用于信息存储和信号处理等过程;Sr3Ga2Ge4O14 (Nd:SGG)晶体是高峰值、短脉冲和高频率固态激光器用潜在的激光晶体材料;Bi12GeO20 (BGO)是一种有前途的多功能晶体材料,在光折变、电光、压电等方面都有着重要的应用; Bi4GexSi1-xO12混晶的生长有望获得成本低、性能好的无机闪烁晶体。作者采用改进型坩埚下 降法生长技术成功生长了闪烁晶体BGO、铁电晶体PGO、压电晶体SGG、光折变晶体BGO、 激光晶体Nd:SGG、闪烁体BGSO混晶等多种锗酸盐功能晶体。Germanate single crystals are a series of functional materials for many important applications. Bi_4Ge_3O_(12) (BGO) crystal is an excellent scintillator for applications in high-energy physics, geophysical exploration and medical imaging. As a SAW substrate material, Sr_3Ga_2Ge_4O_(14) (SGG) is an important piezoelectric crystal and has potential applications in portable communications and high-temperature detectors. Pb_5Ge_3O_(11)(PGO) is a hopeful material to fabricate pyroelectric detectors due to its small dielectric constant and a relatively high pyroelectric coefficient in a wide range of temperature, and it can be used in the fields of information storage and light signal processing also. Sr_3Ga_2Ge_4O_(14) (Nd: SGG) is a potential laser crystal for fabrication of high performance solid state laser. Multi-functional crystal Bi_(12)GeO_(20) (BGO) exhibits excellent piezoelectric, photoconductive and electrooptic properties and has found wide applications in various optical and piezoelectric devices. The aim of Bi_4GexSi_(1-x)O_(12) crystal growth is to develop a low-cost inorganic scintillator. In this paper, Bridgman growth of some important germanate single crystals, such as Bi_4Ge_3O_(12) (BGO), Sr_3Ga_2Ge_4O_(14) (SGG), Pb_5Ge_3O_(11) (PGO), Nd: Sr_3Ga_2Ge_4O_(14) (Nd: SGG), Bi_(12)GeO_(20) (BGO) and Bi_4GexSi_(1-x)O_(12), has been reported.

关 键 词：锗酸盐 坩埚下降法 晶体生长 功能晶体材料 

分 类 号：TN304.053[电子电信—物理电子学]