BJMOSFET温度特性分析及计算机模拟  

Analysis and Computer Simulation of BJMOSFET's Temperature Characteristics

作　　者：曾云[1] 高云[1] 晏敏[1] 盛霞[1] 滕涛[1] 尚玉全[1] 

机构地区：[1]湖南大学微电子研究所,长沙410082

出　　处：《电子器件》2004年第3期493-497,共5页Chinese Journal of Electron Devices

摘　　要：对兼有双极型和场效应型两种器件特点的双极 MOS场效应晶体管 ( BJMOSFET)的电流和阈值电压的温度特性进行了详细分析 ,推导出它们随温度变化率的解析表达式。建立 BJMOSFET的直流小信号模拟分析等效电路和频率特性模拟分析等效电路 ,采用通用电路仿真软件 PSpice9,对 BJMOSFET的输出特性、瞬态特性和幅频特性随温度的变化进行了计算机模拟 ,得到了随温度变化的特性曲线 ,并且理论分析与计算机模拟取得了一致的结果。相对传统 MOS-FET,证明了 BJMOSFET具有较好的温度特性。A novel power MOSFET structure, named the Bipolar Junction MOSFET, has the features of both BJT and FET. This paper analyzes that BJMOSFET's temperature characteristics of current and threshold voltage and deduces their formula following temperature swing. Equivalent circuit of analysis and simulation has been established for the BJMOSFET's DC small signal characteristic and its frequency charactristic. Applying the general computer software of PSpice9, we simulate temperature characteristics of the BJMOSFET's output characteristic, transient characteristic and amplitude-frequency characteristic and obtain their characteristic graphs. The results indicate that the same conclusions are drawn through theoretical analysis and computer simulation and prove that BJMOSFET has better temperature characteristics than traditional MOSFET.

关 键 词：双极MOS场效应晶体管 温度特性 理论分析 计算机模拟 

分 类 号：TN386.1[电子电信—物理电子学] TP391.9[自动化与计算机技术—计算机应用技术]