纳米La-Bi-Te热电材料的溶剂热合成及其表征  

Solvothermal synthesis and characterization of nano-structured La-Bi-Te thermoelectric materials

作　　者：吉晓华[1] 赵新兵[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州3110027

出　　处：《浙江大学学报（工学版）》2004年第8期951-954,1008,共5页Journal of Zhejiang University：Engineering Science

基　　金：国家自然科学基金资助项目(50171064);国家"863"高技术研究发展计划资助项目(2002AA302406).

摘　　要：以氯化铋、碲粉、氯化镧或氧化镧为原料,采用180℃溶剂热合成和400℃、50MPa、1h热压技术制备了含稀土的新型Bi2Te3基热电材料.TEM、SEM和XRD分析显示,溶剂热合成产物为Bi2Te3基化合物、LaTe以及单质Bi、Te的混合物,颗粒尺寸约30nm.在热压过程中粉末继续反应形成单相的含La三元Bi2Te3,其晶体结构与二元Bi2Te3相同.热压后的微观组织为随机取向的层片状晶粒,层片厚度在100nm以下,电学参数测量表明,材料的热电功率因子在180℃时达到最大值2×10-4W·m·K-2.Rare-earth contained bismuth telluride thermoelectric materials were prepared by solvothermal synthesis at 180°C using bismuth chloride, tellurium powder and lanthanum chloride or oxide as starting materials, followed by hot uniaxial pressing (400°C, at 50 MPa for 1 h). TEM, SEM and XRD analyses show that the solvothermally synthesized powder is a mixture of bismuth telluride based compound, lanthanum telluride, bismuth and tellurium with a grain size of about 30 nm. The powder reacts further during hot uniaxial pressing to form a single phase of lanthanum contained triple bismuth telluride. The crystal structure of this alloy is the same as that of binary bismuth telluride. After hot uniaxial pressing, it has a lamellar grain structure with a thickness of less than 100 nm. Electric variables measurement indicates that the maximum power factor of the material reaches 2×10-4 W&middotm&middotK-2 at 180°C.

关 键 词：半导体材料 热电材料 溶剂热合成 BI2TE3 稀土 热电性能 

分 类 号：TN304[电子电信—物理电子学]