二氧化铈掺杂锆钛酸钡陶瓷性能和结构的研究  

Study on the Properties and Structure of Ba(Ti,Zr)O_3 Ceramics Doping with CeO_2

作　　者：黄新友[1] 高春华[1] 陈祥冲[1] 周浩伟[1] 谭红根[1] 

机构地区：[1]江苏大学材料学院,江苏镇江212013

出　　处：《电子元件与材料》2004年第10期27-29,共3页Electronic Components And Materials

摘　　要：采用传统电容器陶瓷制备工艺,研究了CeO2加入量对Ba(Zr,Ti)O3(BTZ)基电容器陶瓷性能的影响,得到了CeO2影响其性能的规律 ,当w(CeO2)为1.0%时相对介电常数最大(7193),当w(CeO2)为0.5%时介质损耗最小(0.0351)。CeO2有降低居里温度及展宽介电常数-温度峰和减小介电常数温度变化率的作用。利用SEM研究了CeO2对BTZ基陶瓷微观结构的影响,探讨了影响性能的机制,结果表明:CeO2是通过与BTZ形成缺陷固溶体、移峰、偏析晶界及抑制晶粒生长等来影响瓷料性能和结构的。The influence of additive amount of CeO2 on the properties of Ba(Ti,Zr)O3(BTZ) series capacitor ceramics was investigated by means of conventional capacitor ceramic preparation technology,and the law of the influence on the BTZ series capacitor ceramics was obtained,i.e. the diclectric constant is maximum(7193) while w(CeO2)=1.0%,the dielectric losses is minimum(0.0351) while w(CeO2)=0.5%. CeO2 can decrease the Curie temperature and widen the εr-T peak for BTZ ceramics . The influence of CeO2 additive amount on the microstructure of BTZ ceramics by means of SEM was studied. The influence mechanism of CeO2 additive on the properties of the BTZ ceramics was discussed . The results show that CeO2 additive influences the properties of BTZ ceramics by means of forming defect solid solution, shifting Curie temperature peak effect, segregation in crystal boundary, stop grain growth , and so on .

关 键 词：无机非金属材料 二氧化铈 陶瓷电容器 陶瓷 锆钛酸钡 性能 

分 类 号：TM28[一般工业技术—材料科学与工程]