高价B位掺杂Bi_4Ti_3O_(12)陶瓷的铁电性能研究  

Investigation of ferroelectric property in high-valence B-site doped Bi_4Ti_3O_(12) ceramic

作　　者：吴晓波[1] 陈爱平[1] 顾骏[1] 唐磊[1] 李伟[1] 

机构地区：[1]南京大学固体微结构国家重点实验室

出　　处：《周口师范学院学报》2004年第5期43-45,共3页Journal of Zhoukou Normal University

基　　金：国家自然科学基金资助项目(批准号:90207027);国家973项目(批准号:2002CB613303)

摘　　要：用传统的固相反应方法制备了高价V掺杂的Bi4Ti3O12陶瓷样品,用X射线衍射对其结构进行了分析,并测量了样品的铁电和介电性能.结果发现,随着V的掺入,由氧空位引起的样品介电损耗峰的峰高被极大压制.氧空位的减少,使得样品中的畴钉扎效应减弱,从而提高了样品的抗疲劳特性和剩余极化.同时V的掺入,降低了材料的居里温度.: V doped Bi_(4)Ti_(3)O_(12) ceramics were prepared by using the conversional solid state reaction method . Their crystal structure were analyzed by X-ray diffraction , and ferroelectric and dielectric properties are measured . The results show that with the incorporation of V , the dielectric peak caused by the migration of oxygen vacancy was greatly suppressed . The decrease of oxygen vacancy results in the weakening of domain pinning effect . Thus the fatigue endurance and remnant polarization is enhanced. Curie temperature is decreased with the increase of V doping content.

关 键 词：介电损耗 BI4TI3O12 铁电性 陶瓷材料 

分 类 号：O48[理学—固体物理] TM30[理学—物理]