化学沉积纳米晶Co-P合金及其沉积速率影响因素的研究  

Study of nanocrystalline Co-P alloy electroless deposition and its influencing factors on deposition rate

作　　者：舒霞[1] 吴玉程[1] 张勇[2] 郑玉春[1] 王文芳[1] 黄新民[1] 李广海[2] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]中国科学院固体物理研究所,安徽合肥230031

出　　处：《电镀与涂饰》2004年第5期1-5,共5页Electroplating & Finishing

基　　金：安徽省自然科学基金"电化学沉积纳米涂层组成设计;制备与性能研究"(00046403);合肥工业大学中青年创新群体基金(纳米结构与功能纳米材料)资助。

摘　　要：　化学沉积可得到均匀、致密的纳米晶薄膜,是一种较为理想的纳米晶制备方法。采用正交实验优化了化学沉积纳米晶钴磷合金的工艺配方,研究了正交实验5因素如硫酸钴、柠檬酸三钠、硼酸、次磷酸钠和温度及负载因子、沉积时间对沉积速度的影响。研究获得的优化工艺配方和参数为:0 06～0 12mol/LCoSO4·7H2O,0 40～0 55mol/LNaH2PO2·H2O,0 15～0 3mol/LNa3C6H5O7·2H2O,0 3～0 6mol/LH3BO3,50～80℃,负载因子0 4～0 8dm2/L。Electroless deposition is an applicable and ideal method to prepare uniform and fine nanocrystalline membranes. Process formula of nanocrystalline Co-P alloy electroless deposition was optimized by orthogonal test. The influences of five factors such as CoSO_4·7H_2O, NaH_2PO_2·H_2O, Na_3C_6H_5O_7·2H_2O, H_3BO_3 and temperature as well as loadfactor of copper foil and deposition time on deposition rate were investigated. The optimum formula was composed of 0.06～(0.12 mol/L) CoSO_4·7H_2O, 0.40～0.55 mol/L NaH_2PO_2·H_2O,0.15～0.3 mol/L Na_3C_6H_5O_7·2H_2O,0.3～0.6 mol/L H_3BO_3, 50～80 ℃ and loadfactor of 0.4～0.8 dm^2/L.

关 键 词：钴磷合金 化学沉积 纳米晶 沉积速率 

分 类 号：TQ153.2[化学工程—电化学工业] TG178[金属学及工艺—金属表面处理]