半导体硅片金属微观污染机理研究进展  

Recent progress in metallic microcotamination of semiconductor silicon wafer

作　　者：郑宣[1] 程璇[1] 

机构地区：[1]厦门大学化学系固体表面物理化学国家重点实验室,福建厦门361005

出　　处：《半导体技术》2004年第8期53-56,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(20073036)

摘　　要：综述了近10年来国内外在半导体硅片金属微观污染研究领域的进展。研究了单金属特别是铜的沉积、形成机理和动力学以及采用的研究方法和分析测试手段,包括对电化学参数和物理参数等研究。指出了随着科学技术的不断发展,金属污染金属检测手段也得到了丰富,为金属微观污染的研究提供了有力的工具。Research progresses in recent 10 years in metallic microcontamnation of silicon wafer during wet cleaning are briefly reviewed. Significant research works have been focused on single metal, in particular copper deposition and its mechanism and kinetics, including electrochemical pa- rameter and physical parameter measurements. With the rapid development in scientific technology, various monitoring tools for metal contamination become more reliable and easily operated, which will provide more powerful research tools for the future study in metallic microcontamination on silicon wafer.

关 键 词：半导体硅片 微观污染 铜沉积 硅清洗 

分 类 号：TN305.97[电子电信—物理电子学]