硅基光致发光膜:(Zn_2SiO_4/Si):Tb/Mn的制备  

Silicon based photoluminescent films:Tb or Mn doped Zn_2SiO_4 on silicon wafer

作　　者：赵士超[1] 季振国[1] 刘坤[1] 宋永梁[1] 杨永德[2] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027 [2]杭州电子工业学院,杭州310012

出　　处：《真空科学与技术学报》2004年第3期238-240,共3页Chinese Journal of Vacuum Science and Technology

基　　金：国家基础研究发展规划项目 (No .G2 0 0 0 0 683 0 6) ;自然科学基金重大项目 (No .90 2 0 10 3 8)

摘　　要：利用溶胶 凝胶涂膜技术及高温固相反应技术 ,在硅片表面生长了掺铽和锰的两种高效硅基光致发光膜。XRD和吸收光谱分析测试结果表明 ,当固相反应温度高于 85 0℃时 ,在硅片表面形成了晶态的Zn2 SiO4薄膜。荧光光谱实验结果表明这种利用高温固相反应生成的掺铽或掺锰的Zn2 SiO4薄膜的发光强度高 ,余辉为 1 0ms数量级。本方法制备的硅基发光膜热稳定性及化学稳定性好 。Terbium and manganses doped Zn 2SiO 4 films with strong photoluminescence were successfully grown on silicon wafers by sol gel dip coating followed by high temperature solid phase reaction.X ray diffraction and UV Vis absorption results showed that the films,annealed above 850 ℃ for 4 h,were Zn 2SiO 4 with willemite structure,while the films annealed below 850 ℃ for 4 h were ZnO.Photoluminescence measurements showed that the terbium and manganese doped films had very strong photoluminescence intensity and short decay times.

关 键 词：硅酸锌 固相反应 硅基光电薄膜 发光基体 制备 掺杂 

分 类 号：TN104.3[电子电信—物理电子学]