陶瓷单晶 ( 1 0 0 )基底上外延生长Pt薄膜(英文)  

Formation of Epitaxial Platinum Films on Ceramics-(100) Single Crystal Substrates

作　　者：赵昆[1] 黄康权[2] 张丽[1] 

机构地区：[1]聊城大学物理科学与信息工程学院磁电子学实验室,聊城252059 [2]香港中文大学物理系

出　　处：《人工晶体学报》2004年第4期690-693,共4页Journal of Synthetic Crystals

基　　金：theResearchFoundationofShandongProvincialEducationDepartmentofChina (No .0 3A0 5) ,ShandongScienceFundforDistinguishedYoungScientist (No .0 2BS0 50 ) ,andtheHongKongResearchGrantCouncil

摘　　要：用对靶溅射技术在MgAl2 O4(10 0 ) (MAO)和SrTiO3 (10 0 ) (STO)单晶基底上制备Pt薄膜。基底温度为 70 0℃时 ,Pt薄膜外延生长为 (2 0 0 )取向 ,Pt/STO薄膜的电阻率很低 ,而Pt/MAO薄膜表现出高电阻特征。此外 ,Pt(5 0nm) /La0 .67Ca0 .3 3 MnO3 (5 0nm) /STO的制备和研究表明 ,在包括庞磁电阻材料的器件设计中 ,Pt是一种较好的电极材料。Thin platinum (Pt) films were prepared on single-crystal substrates MgAl_2O_4 (100) (MAO) and SrTiO_3 (100) (STO) by a facing-target sputtering technique. The films prepared at higher substrate temperature (T_s= 700℃) were grown epitaxially with (200) orientation on SrTiO_3 (100) and MgAl_2O_4 (100). Different from the lower resistivity of Pt/STO film, Pt/MAO film shows a very higher resistivity and the temperature dependence of the resistance exhibits insulator behavior because of the pinhole formation. We also grew epitaxial Pt (50 nm)/La_(0.67)Ca_(0 33)MnO_3 (50nm)/STO structure, indicating that Pt is a good electrode for devices involving colossal magnetoresistance materials.

关 键 词：陶瓷单晶 对靶溅射技术 MGAL2O4 铝酸镁 Pt薄膜 X射线衍射 原子力显微镜 庞磁电阻 

分 类 号：O484[理学—固体物理]