双极型及全MOS集成运算放大器的非线性宏模型  

The Nonlinear Macromodels for Bipolar and MOS Integrated Circuit Operational Amplifiers

作　　者：苏文钧 王慧云[2] 王予宏 陈秀中[2] 

机构地区：[1]南京航空学院电子工程系 [2]天津大学

出　　处：《南京航空学院学报》1989年第3期85-92,共8页

基　　金：国家自然科学基金

摘　　要：本文建立了一种双极型集成运算放大器和MOS集成运算放大器的宏模型。模型对运放的线性及非线性特性考虑得较全面。由于宏模型的拓扑结构与实际运放的结构有一定的对应关系,故使用者无论是在理解、掌握、使用模型等方面都会感到很方便和容易。 模型可用SPICE程序来进行分析和验证,模拟验证结果表明,本文所建立的宏模型较以往的模型具有精度高、节省模拟时间等特点,与器件级模型相比较,宏模型在单个运放电路的模拟中所用时间约节省8倍。In this article,macromodels for bipolar and MOS operational amplifiers are developed. They simulate almost all of the linear and nonlinear behaviour of operational amplifiers.Users are easy in understanding,handling and using the models,for they in part preserve the topological structure of corresponding original circuits.The models may be verified and analysed by SPICE programs. The simulated results show that the models are better than other .macromodels in simulated accuracy and simulation time etc. Further more, in comparison with models of device type, the time of simulation for this macromodel will be reduced to one-eighth.

关 键 词：集成电路 运算放大器 宏模型 

分 类 号：TN431[电子电信—微电子学与固体电子学]