残余氧对TiN+Si_3N_4纳米复合薄膜硬度的影响  

IMPACT OF RESIDUAL OXYGEN ON HARDNESS OF NANO STRUCTURED TiN+Si3N4 FILM

作　　者：马大衍[1] 马胜利[1] 徐可为[1] S.Veprek 

机构地区：[1]西安交通大学金属材料强度国家重点实验室 [2]Institute for Chemistry of Inorganic Materials,Technical University Munich,Lichten-bergst.4,D-85747 Garching,Munich,Germany

出　　处：《金属学报》2004年第10期1037-1040,共4页Acta Metallurgica Sinica

基　　金：国家高技术研究发展计划项目2001AA338010;国家自然科学基金项目50271053;50371067;教育部博士点基金项目;中德重点实验室合作项目20033007资助

摘　　要：用直流等离子体增强化学气相沉积设备在不锈钢表面沉积纳米晶TiN和纳米非晶Si3N4复相薄膜.主要研究了氧元素对薄膜硬度的影响.结果表明,薄膜中极其微量的氧含量就会使nc-TiN+a-Si3N4薄膜的硬度大幅降低.薄膜中氧含量小于0.2％(原子分数),薄膜硬度可以达到45-55 GPa,而氧含量升至1％-1.5％后,薄膜硬度降至30 GPa左右.其原因与晶界处形成SiOx相有关.Using direct current plasma enhanced chemical vapor deposition (PCVD) techniques, the nanocomposite films of nc-TiN + a-Si3N4 were synthesized. The detrimental effects of residual oxygen on the films hardness were explored. A minor content of residual oxygen can strongly decrease the hardness of the superhard film. Oxygen impurity of 1%-1.5% (atomic fraction) can make the hardness of film decrease to about 30 GPa as compared to 45-55 GPa for the film with below 0.2% oxygen, which is related to the formation of SiOx at interface of crystalline.

关 键 词：PCVD TIN SI3N4 薄膜 硬度 氧含量 

分 类 号：TB43[一般工业技术]