掺氟二氧化锡透明导电膜的核技术分析  

A study of transparant conductive SnO_2 films by nuclear techniques

作　　者：谭春雨[1] 夏曰源[1] 许炳章[1] 刘向东[1] 刘吉田[1] 陈有鹏[2] 李淑英[2] 马洪磊[2] 李金华 

机构地区：[1]山东大学,济南250100 [2]山东大学光电材料器件研究所,济南250100 [3]常州半导体厂,常州213001

出　　处：《核技术》1993年第6期349-355,共7页Nuclear Techniques

基　　金：山东省自然科学基金

摘　　要：运用卢瑟福背散射(RBS)和二次离子质谱(SIMS)技术相结合测量了SnO_2透明导电膜的密度和膜厚,对于常压CVD法制备的SnO_2薄膜密度约为6.20g/cm^3,接近相应块状材料的密度。采用^(19)F(p,αγ)^(16)O共振核反应技术测量了用于非晶硅太阳能电池电极的大面积掺氟SnO_2(FTO)中氟的含量和深度分布以及50—180keV的^(19)F^+离子注入SnO_2膜中氟离子的射程分布参数。结果表明,FTO膜中氟元素的含量和深度分布并不是均匀的,而是在0.6×10^(20)—6.O×10^(20)/cm^3间波动;50—180keV的^(19)F^+离子注入SnO_2膜中氟离子的平均投影射程(R_P)值与理论计算结果符合得很好,而平均投影射程标准偏差(ΔR_P)值则比理论值偏大。Density and thickness of SnO2 films have been measured by RBS combined with SIMS. The density of the SnO2 films prepared by using atmospheric pressure CVD method is about 6.20g/cm3. Fluorine concentration and distribution in the F-doped SnO2 films(FTO) as well as range distribution parameters, Rp and △Rp, of 19F+ ion- implanted SnO2 films have been measured by use of the 19F(p, a γ)16O resonance nuclear reaction. Fluorine concentration in FTO films varies with depth from 6.0 ×1020/cm3 to 0.6×1020/cm3. The experimental range parameters are compared with those obtained by the TRIM89 program. It is shown that the experimental Rp values agree with the TRIM values very well, but the experimental range straggling △Rp are larger. This phenomenon may be attributed to the enhanced diffusion during ion implantation.

关 键 词：密度 厚度 氟 导电薄膜 二氧化锡 

分 类 号：TN204[电子电信—物理电子学]