超薄有源层谐振腔增强型调制器  

Resonant-cavity Enhanced Optical Modulator with Ultrathin Active Layer

作　　者：杨晓红[1] 梁琨[1] 韩勤[1] 牛智川[1] 杜云[1] 吴荣汉[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《光子学报》2004年第10期1196-1199,共4页Acta Photonica Sinica

基　　金：国家自然基金 (6 0 1370 2 0 );国家" 973计划"(TG2 0 0 0 0 36 6 0 3;2 0 0 1CB30 95 0 6 )资助项目

摘　　要：提出利用超薄有源层制备高性能谐振腔增强型 (RCE)半导体电吸收调制器件的可能性 ,并与波导型器件进行性能对比 ;对透射和反射两种类型器件优化分析了器件结构 ,进行了性能比较 ,结果表明 :在插入损耗相当的情况下 。A resonant-cavity enhanced optical modulator is proposed, with an ultrathin active layer in the cavity. This kind of device has been compared with normal waveguide EA modulator, and the device structures are optimized theoretically. The two kinds of device of transmission and reflection modeare compared, the results showed that the reflection device has higher extinction ratio in same level of insertion loss.

关 键 词：调制器 量子阱 RCE 

分 类 号：TN929.11[电子电信—通信与信息系统]