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机构地区:[1]广东工业大学应用物理系,广东广州510500
出 处:《广东工业大学学报》2004年第3期8-10,共3页Journal of Guangdong University of Technology
基 金:广东工业大学青年基金资助项目(022031)
摘 要:研究了电化学对聚合物发光二极管空穴注入和传输层(PEDOT薄膜,polyethylenedioxythiophene)的掺杂处理.由这种薄膜与ITO(indium tinoxide)构成的双层阳极明显地改善了器件性能,当以MEH PPV(poly(2'-methoxy,5(2'-ethyl-hexyloxy)-1,4-phenylenevinylene))为发光聚合物时,器件的工作电压得到了降低;当以PFO(poly(2,7-dibromo-9,9-dioctylfluorene))作为发光聚合物时器件的最大外量子效率提高到0.6%.PEDOT film, the hole injection and transport layer in the polymer light emitting diodes are doped by using electrochemical method. Performance of device based on the bilayer anode structure using ITO and these processed PEDOT film is pronounced improved. The working voltage is decreased with MEHPPV as the semiconducting luminescent polymer, and an external quantum efficiency of 0.6% is achieved while PFO serves as the luminescent layer.
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