中频溅射技术沉积镱铒共掺Al_2O_3薄膜光致发光  

Photoluminescence of Yb^(3+)/Er^(3+) Co-doped Al_2O_3 Film Fabricated by Medium Frequency Sputter

作　　者：高景生[1] 宋昌烈[1] 李成仁[1] 李淑凤[1] 宋琦[1] 黄开玉[1] 李国卿[1] 

机构地区：[1]大连理工大学物理系,辽宁大连116024

出　　处：《光电子．激光》2004年第10期1162-1165,1180,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(69889701);辽宁省科技厅资助项目(20022110);辽宁省教育厅资助项目(202123198)

摘　　要：用中频孪生靶溅射法在硅片上制备了镱铒共掺氧化铝薄膜(2cm×2cm),在室温下检测到薄膜的位于1535nm的很强的光致发光光谱(PL),讨论了泵浦功率、镱铒共掺比例、退火温度对光致发光光谱强度的影响。扫描电镜(SEM)观察分析表明,中频孪生靶溅射法沉积的薄膜致密、均匀、光学缺陷少。实验结果表明:镱铒共掺薄膜的荧光强度不随泵浦功率的增加而饱和,最佳的镱铒共掺杂比例9∶1,最佳退火温度850℃,对各种实验结果给出了理论的解释。Fabricated Al2O3 based film doped with Er, and co-doped with Yb by medium frequency (MF) sputtering. The film size was 2 cm × 2 cm. A strong photoluminescence at 1535 nm was detected at the room temperature. Discussed the influence on photoluminescence of pump power, Yb3+/Er3+ co-doped ratio and anneal temperature. Observed the surface topography by SEM technique rather smooth and exhibited neither cracks nor voids. The result exhibited the photoluminescence didn't saturate along with the increasing of pump power, Yb3+/Er3+ co-doped ratio of optimized was 9:1 and the optimal anneal temperature was 850°C. Presented a theoretic analyse to the various experiment results.

关 键 词：泵浦功率 中频 光致发光光谱 AL2O3薄膜 硅片 溅射法 退火温度 孪生 氧化铝薄膜 沉积 

分 类 号：TN304[电子电信—物理电子学] O484[理学—固体物理]