Nd∶GdVO_4晶体生长及其LD端面泵浦调Q激光性能  

Growth of Nd∶GdVO_4 Crystal and Its LD Side Pumped Q-switching Laser

作　　者：杨菁[1] 秦连杰[2] 孟宪林[3] 张小民[4] 

机构地区：[1]山东大学信息科学与工程学院,山东济南250100 [2]烟台大学环境和材料工程学院,山东烟台264005 [3]山东大学晶体材料国家重点实验室,山东济南250100 [4]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《光电子．激光》2004年第9期1069-1073,共5页Journal of Optoelectronics·Laser

摘　　要：通过液相合成方法提纯Nd∶GdVO4多晶料,降低生长过程中存在的原料非一致性挥发,以及使用特殊晶体生长温控技术和消除晶体"后天性光散射",Czochralski方法成功生长系列不同钕掺杂浓度的Nd∶GdVO4单晶。采用不同透过率的Cr4+∶YAG晶体对Nd∶CdVO4晶体进行激光调Q实验。实验结果显示,Cr4+∶YAGNd∶GdVO4激光器可以得到稳定高平均功率调制激光输出。实验得到的最小脉冲宽度只有6ns,对应峰值能量为26.4kW。对不同浓度掺杂对晶体调制激光性能也进行了比较,发现掺钕浓度越高,激光脉冲能量和峰值功率越大。对该晶体的GaAs调Q激光输出性能也进行了介绍,4.8W泵浦光下,最大GaAs调制激光输出为0.63W。Nd∶GdVO_4 polycrystalline materials were synthesized by a liquid-phase reaction method.Several different Nd doping concentrations Nd∶GdVO_4 crystals were successfully grown by the Czochralski method through reducing the incongruent volatilization of melt,using special temperature-control technology and eliminating the posteriority crystal scattering.Q-switching lasers with saturable absorbers of Cr4+∶YAG cryatals had been investigated.It was shown that the stable and high output power had been obtained by Nd∶GdVO_4/Cr4+∶YAG laser.The minus pulse width was only 6 ns and its pulse energy was 26.4 kW.The influences of the doped concentration were also discussed.The higher the concentration of Nd ion is,the better the energy and the peak power of laser pulse will be.In this paper,we also introduced the Q-switching properties of Nd∶GdVO_4/GaAs laser.A 0.63 WQ-switching laser was obtained under a pump power of 4.8 W.

关 键 词：调Q 激光输出 ND:GDVO4晶体 LD端面泵浦 调制 激光性能 峰值功率 晶体生长 光散射 单晶 

分 类 号：TN248[电子电信—物理电子学] TN24