CMOS集成混频器噪声模型的计算机仿真与分析  

Computer Simulation and Analysis of the Noise Model for CMOS Integrated Mixer

作　　者：李俊宏[1] 

机构地区：[1]新南威尔士大学电子电气工程学院澳大利亚

出　　处：《微电子学》2004年第5期514-518,共5页Microelectronics

摘　　要：　根据Hspice仿真结果,分析了CMOS集成混频器中场效应管的闪烁噪声和寄生电容产生输出噪声的详细过程。通过改变电路仿真参数,得出相应的仿真数据,结合理论模型对实验数据进行了分析。结果表明,由闪烁噪声引起的直接开关噪声增益随本振幅度递减,由寄生电容引起的间接开关噪声增益随寄生电容值和本振频率递增。Based on the results of the Hspice simulation, the process of output noise induced by flicker noise and parasitic capacitor in CMOS integrated mixer is analyzed in detail.Relevant simulation data are obtained by varying parameters of the circuit, and the experimental data are analyzed using a theoretical model.Results indicate that the direct switching noise induced by flicker noise decreases as LO amplitude increases, and the direct switching noise caused by parasitic capacitor increases with the value of parasitic capacitor and LO frequency.

关 键 词：CMOS 混频器 SPICE仿真 闪烁噪声 寄生电容 噪声增益 

分 类 号：TN432[电子电信—微电子学与固体电子学]