Zr/Ti比对PSN-PZN-PMS-PZT五元系压电陶瓷性能的影响  

EFFECT OF Zr/Ti ON PROPERTIES OF PSN-PZN-PMS-PZT QUINARY PIEZOELECTRIC CERAMICS

作　　者：陆翠敏[1] 孙清池[1] 孙琳[1] 徐明霞[1] 

机构地区：[1]天津大学材料科学与工程学院,300072

出　　处：《陶瓷学报》2004年第3期149-152,共4页Journal of Ceramics

基　　金：天津大学先进陶瓷和加工技术教育部重点实验室资助

摘　　要：以固态氧化物为原料,采用二次合成工艺制备PSN-PZN-PMS-PZT五元系压电陶瓷。研究准同型相界(MPB)附近组成为0.03Pb(Sn1/3dNb2/3)O3-0.03Pb(Zn1/3Nb2/3O3-0.04Pb(MnSb2/3)03-xPbZrO3-(0.9-x)PbTiO3(x=0430-0.460)的陶瓷性能。结果发现:在合成温度860℃、保温3h时可以得到钙钛矿结构。当x=0.435,即Zr/Ti=0.935时,烧结温度1260℃,保温3h,其压电、介电性能在准同型相界处综合性能最佳:ε33T/ε0=1390,d33=300×10-12C/N,Kp=55.1％,Qm=1180。In the paper, 0.03Pb(Sn1/3Nb2/3)O3-0.03Pb(Zn1/3Nb2/3)O3-0.04Pb(Mn1/3Sb2/3)O3-xPbZrO3-(0.9-x)PbTiO3 (x=0.430-0.460) at near the morphotropic phase boundary (MPB)We're prepared by using two-stage technique with solid oxides as raw materials. The results showed that pure perovskitic structure was obtained at calcination of 860℃. the PSN-PZN-PMS-PZT quinary system exhibited a well-situated property at morphotropic phase boundary. The optimized results of ε33T/ε0 (1390), d33 (300pC/ N), Kp (55.1%) and Qm (1230) were obtained with x=0.435 at sintering of 1260℃ temperatures for 3h.

关 键 词：合成工艺 准同型相界 合成温度 介电性能 PZT 压电陶瓷 制备 PB(ZN1/3NB2/3)O3 钙钛矿结构 PBTIO3 

分 类 号：TQ174[化学工程—陶瓷工业] TM282[化学工程—硅酸盐工业]