基于类金刚石沉积的短脉宽XeCl激光设计及脉宽分析  

Design of a new short pulse width XeCl laser with high power based on quartz films and laser pulse profiles analysis

作　　者：任韧[1] 陈长乐[2] 徐进[3] 金克新[2] 王永仓[2] 王跃龙[2] 汪世林[2] 宋宙模[2] 袁孝[2] 

机构地区：[1]西安交通大学物理系,陕西西安710049 [2]西北工业大学应用物理系,陕西西安710072 [3]西安交通大学生物医学所,陕西西安710049

出　　处：《量子电子学报》2004年第5期601-605,共5页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(60171043);陕西省自然科学基金(2001C21);西安交通大学自然基金(xjj2004000)

摘　　要：在气体配比HCl:Xe:He=0.12％:1％:98.88％实现了大功率短脉冲XeCl准分子激光器,以纳米异质结构、微观量子阱、表面微小尺度薄膜沉积,镀制金刚石薄膜、半导体薄膜、巨磁薄膜,及外延生长及后续的光刻、激光与物质的相互作用、等离子体研究为目的,设计了高能量、短脉宽脉冲放电激励的XeCl准分子激光器新型结构,完成了脉冲波形测试。试验结果表明:激光脉宽最短13ns,单脉冲能量450mJ,矩形光斑大小2cm×1cm,束散角3mrad,最高重复频率5 Hz。验证了激光器结构、动力学速率方程、总结出了饱和增益、脉宽规律。产生的短脉宽激光热融蚀效应小,类金钢石材料对基底形成了良好的等离子溅射羽辉。A new high power, short duration time XeCl laser is realized in the proportion of HCl:Xe:He=0.12%:1%:98.88%, in order to prepare microstructure of quantum effect, molecular beam epitaxy, depositing film and analysis of output pulse profiles. Based on the analysis of gain coefficient and saturated state, with the increase of gas pressure and discharge voltage, the short duration time of laser pulse is obtained. The working pulse of XeCl laser is 18.65 ns. Calculated result indicated not only that the structure and the kinetics velocity equation of laser are suitable, but also which the duration time of pulse is shorter under unsatured process and is rising at satured state with growth of the pumped power. The new XeCl laser has the advantage of smaller heat affected zones, which has acted on the target material to produce the vapor plasma plume, carrying out more accurate nano-crystalline structures.

关 键 词：激光技术 XECL激光 纳秒放电 脉冲激光沉积技术 预电离 辉光放电 

分 类 号：TN242[电子电信—物理电子学]