HgBa_2CuO_(4+δ)中载流子分布的研究  

STUDY OF CARRIER DISTRIBUTION AND SUPERCONDUCTIVITY IN HgBa_2CuO_(4+δ)

作　　者：刘文利[1] 韩圣浩[1] 张酣[2] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100 [2]北京大学物理系国家介观物理重点实验室材料物理实验室,北京100871

出　　处：《低温物理学报》2004年第4期314-318,共5页Low Temperature Physical Letters

摘　　要：我们根据一种结构分块模型 ,计算了与超导转变温度Tc 密切相关的块之间相互作用能 ,讨论了HgBa2 CuO4 +δ中载流子分布对相互作用能的影响 .通过计算不同氧缺陷下 ,空穴在不同平面以及空穴在Cu O平面不同位置上对相互作用能的影响 ,研究了它们与超导电性的关联 .计算表明 ,空穴在Cu O面上的位置不仅明显地影响到相互作用能的大小 ,而且影响相互作用能随氧含量的变化趋势 ,该结果为我们了解载流子在Cu O面上分布是否均匀提供了一定的线索 .结果还表明 ,HgBa2 CuO4 +δ中的载流子主要分布在CuAccording to a block model, a superconductor, HgBa-2CuO-{4+δ} with one Cu-O plane, was studied. The influence of the charge distribution on the combinative energy was investigated. The combinative energy for the holes in different planes and in different positions in the Cu-O plane, and the relationship between the combinative energy and the superconductivity were studied, respectively. The results show that the position of the holes in the Cu-O plane not only have an obvious influence on the value of the combinative energy but also the trend of variation of the combinative energy with the oxygen deficiency. It provides some clue for understanding whether the distribution of the carriers is homogeneous in the Cu-O plane. The results also imply that the carriers mainly concentrate in the Cu-O plane.

关 键 词：相互作用能 载流子 空穴 超导电性 氧缺陷 平面 分块 超导转变温度 计算表 均匀 

分 类 号：O511.1[理学—低温物理]