超薄单晶基底本征约瑟夫逊结的制备  

FABRICATIONS OF INTRINSIC JOSEPHSON JUNCTIONS ON ULTRA THIN SINGLE CRYSTALS

作　　者：闫生超[1] 尤立星[1] 陈健[1] 吴培亨[1] 

机构地区：[1]南京大学超导电子学研究所,南京210093

出　　处：《低温物理学报》2004年第4期330-333,共4页Low Temperature Physical Letters

基　　金：国家重点基础研究发展规划项目 (G19990 6 4 6 );国家高技术研究发展计划资助的课题~~

摘　　要：为了加强本征约瑟夫逊结 (简称本征结 )与高频电磁波信号的耦合 ,我们通过平面工艺手段获得了厚度小于伦敦穿透深度的超薄单晶基底 ,其厚度小于 15 0nm .并在此基底上利用传统的mesa结构制备工艺制备了本征结 .所制备的本征结超导性能没有发生明显的退化 。In order to increase the coupling between intrinsic Josephson junctions and high-frequency signal sources, we have successfully fabricated ultra thin single crystals, whose thicknesses are less than London penetration depth (～150nm). Then on these ultra thin single crystals, we fabricated the intrinsic Josephson junctions using the conventional fabrication process. These junctions perform stable electrical characteristics, which is nearly the same with those of conventional ones.

关 键 词：本征结 单晶 超导性能 退化 伦敦 超薄 平面工艺 信号 高频电磁波 厚度 

分 类 号：O511[理学—低温物理]