直拉硅片中间隙氧和硼对太阳电池光衰减影响的研究  

STUDY ON THE EFFECT OF BORON AND INTERSTITIALOXYGEN TO LIGHT DEGRADATION OF SOLAR CELLS

作　　者：任丙彦[1] 霍秀敏[1] 左燕[1] 励旭东[2] 许颖[2] 王文静[2] 

机构地区：[1]河北工业大学,天津300130 [2]北京市太阳能研究所,北京100083

出　　处：《太阳能学报》2004年第5期629-632,共4页Acta Energiae Solaris Sinica

基　　金：河北省自然基金资助项目(编号:501019)

摘　　要：为研究间隙氧和硼对于硅片少子寿命和光衰减的影响,实验中采用不同氧碳含量、不同掺杂浓度的p型(100)的直拉硅(Cz Si)片制作太阳电池,设计了不同温度、气氛的热处理工艺。发现:太阳能级直拉单晶硅片中间隙氧含量和硼的掺杂浓度的不同对于硅片少子寿命的影响有一定的规律;硅片少子寿命值在650℃热处理时有轻微下降,而在后续650℃和950℃的热处理中有着显著的提高。当电阻率一定时,低氧的样片有利于少子寿命的提高;而在氧含量相同的情况下,掺杂硼的浓度越低,对于少子寿命的提高越有利。The solar cells were fabricated of boron-doped p(100) Cz-Si with no dislocation and different interstitial oxygen contents. Two groups of Cz-Si with different oxygen contents and resistivity were studied under same annealing condition. Heat treatments at several different temperatures and atmosphere were applied in the experiments. The minor carrier lifetime slightly decreases under 1100°C and increases greatly after following 650°C and 950°C treatment and it was clarified that boron and interstitial oxygen are major components of defect center for the light degradation.

关 键 词：间隙氧 掺杂 光衰减 太阳电池 

分 类 号：TK514[动力工程及工程热物理—热能工程]