Circuit Topology Analysis of CMOS LNA in Mobile Communication Systems  

作　　者：LIEnding CHENGui-can WANGJin-fu 

机构地区：[1]InstituteofMicroelectroniesofXi'anJiaotongUniversity,Xi'an710004,P.R.China [2]InstituteofMicroelectroniesofXi'anJiaotongUniversity,Xi'an710004,P.R.China

出　　处：《The Journal of China Universities of Posts and Telecommunications》2004年第2期103-107,共5页中国邮电高校学报（英文版）

基　　金："PlannedScientificResearchProjectSponsoredbytheEducationDepartmentofShaanxiProvince"underthegrantNo.0 4JK2 65

摘　　要：A Low Noise Amplifier (LNA) intended for the use in the front-end of the third-generation WCDMA receivers is designed in a standard 0 25?um CMOS process. In the LNA circuit, a positive-feedback Q-enhancement and tuning technique is used to obtain an optimal Q for acquiring a minimum noise figure. The LNA in our design has a forward gain of 20 3?dB and a minimum noise figure of 1 2?dB at 2 0?GHz. The power dissipation is 30?mW at a 2 5?V supply.A Low Noise Amplifier (LNA) intended for the use in the front-end of the third-generation WCDMA receivers is designed in a standard 0 25?um CMOS process. In the LNA circuit, a positive-feedback Q-enhancement and tuning technique is used to obtain an optimal Q for acquiring a minimum noise figure. The LNA in our design has a forward gain of 20 3?dB and a minimum noise figure of 1 2?dB at 2 0?GHz. The power dissipation is 30?mW at a 2 5?V supply.

关 键 词：LNA CMOS technology quality factor noise figure 

分 类 号：TN492[电子电信—微电子学与固体电子学] TN929.5