纳米Si-SiO_x和Si-SiN_x复合薄膜的低温制备及其发光特性  

Low temperature fabrication of nanostructured Si-SiO_x and Si-SiN_x composite films and their photoluminescence features

作　　者：纪爱玲[1] 马利波[1] 刘澂[1] 王永谦[1] 

机构地区：[1]中国科学院物理研究所与凝聚态物理中心表面物理国家重点实验室,北京100080

出　　处：《物理学报》2004年第11期3818-3822,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划项目 (批准号 :2 0 0 2CB613 5 0 5和 2 0 0 3AA3 0 2 170 );国家自然科学基金委员会优秀研究群体研究项目 (批准号 :10 13 40 3 0 )资助的课题~~

摘　　要：用等离子体增强化学气相沉积法在低温 (低于 5 0℃ )衬底上沉积Si SiOx 和Si SiNx 复合薄膜 ,可得到平均颗粒尺寸小至 3nm的高密度 (最高可达 4 0× 10 1 2 cm- 2 )纳米硅复合薄膜 .5 0 0℃快速退火后 ,这种复合薄膜显现出优异的可见光全波段光致发光特性 .通过比较相同条件下所制备的纳米Si SiOx 和Si SiNx 复合薄膜的光致发光效率 ,发现纳米Si SiNx 具有更为优异的光致发光效率 。Silicon nanoparticles were fabricated in both silicon oxide and nitride matrices by using plasma-enhanced chemical vapor deposition, for which a low substrate temperature belowo 50℃ has been found most favorable. High-density (up to 4.0×10 12cm -2, from TEM micrograph) amorphous silicon nanoparticles with an averaged size down to 3 nm have been obtained. Strong room-temperature photoluminescence was observed in the whole visible light range from the deposits that were post-annealed at 500℃ for two minutes. Careful comparison shows that the Si-SiN x films provoke a significantly more effective photoluminescence than Si-SiO x films fabricated with similar processing parameters, especially in the green and blue light range. Theis low_temperature procedure for fabricationg light_emitting silicon structures opens up the possibility of manufacturing silicon_based tunable high_efficiency light_emitting devices.

关 键 词：光效率 短波 纳米硅 发光特性 衬底 快速退火 波段 等离子体增强化学气相沉积法 复合薄膜 光致发光 

分 类 号：O484.1[理学—固体物理]