微电子材料化学机械平坦化加工中的材料去除率模型  

A MODEL OF MATERIAL REMOVAL RATE DURING CHEMICAL MECHANICAL PLANARIZATION OF MICROELECTRONIC MATERIALS

作　　者：严波[1] 张晓敏[1] 吕欣[2] 

机构地区：[1]重庆大学工程力学系,重庆400044 [2]重庆大学土木工程学院,重庆400044

出　　处：《工程力学》2004年第5期126-131,共6页Engineering Mechanics

基　　金：重庆大学骨干教师资助计划项目

摘　　要：采用有限元数值方法分析微电子材料化学机械平坦化(CMP)工艺过程中材料的变形和去除机理,得到作用在磨料颗粒上的力与名义压力、磨粒含量以及垫板几何和力学特性之间的关系,进而建立起一个材料去除率(MRR)模型。利用该模型预测得到的材料去除率与悬浮液中磨料颗粒含量以及压力间的关系与已有的实验结果相吻合,合理解释了实验观察到的现象。The deformation of materials and material removal mechanism during chemical mechanical palnarization (CMP) processing of microelectronic materials are numerically analyzed using finite element method. The dependence of force acting on particles during CMP on nominal pressure, particle concentration and characteristics of pad is determined. With the force acting on particles, a material removal rate (MRR) model is proposed. The results predicted with the model are in good agreement with the available experimental results.

关 键 词：化学机械平坦化(CMP) 材料去除率(MRR) 数值模拟 微电子材料 集成电路 

分 类 号：TG301[金属学及工艺—金属压力加工]