达通型硅雪崩光电二极管结参数与倍增特性的计算  

The computation of junction partmeters and multiplicstion characteristic of resch-through avalanche photodiode

作　　者：文雪冬[1] 钟泽祥 

机构地区：[1]西南技术物理研究所,成都610041

出　　处：《激光技术》1993年第4期209-214,共6页Laser Technology

摘　　要：本文提出了设计达通型硅雪崩光电二极管的分区计算模型。给出了雪崩区参数和倍增特性的计算结果。The purpose of this paper is to intduce a dividing region computation model for designing reachthrough avalanche photodiode (RAPD). The eomputed results of the junction parameters and muhiplieationcharacteristics of avalanche region of RAPD are presented.

关 键 词：发光二极管 雪崩二极管 参数 计算 

分 类 号：TN312.7[电子电信—物理电子学]