Comparison and Analysis of Two Microwave Equivalent-Circuit Models for Resonant Tunneling Diode  

谐振隧穿二极管的两种高频小信号模型比较与分析(英文)

作　　者：钟鸣[1] 张世林[1] 郭维廉[1] 梁惠来[1] 毛陆虹[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《Journal of Semiconductors》2004年第11期1370-1375,共6页半导体学报（英文版）

基　　金：国家重点基础研究发展规划 (批准号 :2 0 0 2 CB3 1190 5 );国家自然科学基金 (批准号 :60 1770 10 )资助项目~~

摘　　要：The distinction between two microwave equivalent-circuit models,quasi Esaki tunneling model (QETM) and quantum well injection transit model (QWITM),for the resonant tunneling diode (RTD) is discussed in details,and two groups of circuit parameters are extracted from experiment data by the least square fit method.Both theory analysis and the comparison of fit results demonstrate that QWITM is much more precise than QETM.In addition,the rationality of QWITM circuit's parameters confirms it too.On this basis,the resistive frequency is calculated,whose influence factors and improvement method are simply discussed as well.讨论了谐振隧穿二极管 (RTD)的两种微波等效电路模型 :类江崎隧道模型 (QETM)和量子阱注入传输模型(QWITM)之间的差异 ,并用最小二乘法拟合实验数据 ,提取了两种模型的电路参数 .理论分析和对拟合结果的比较都说明 QWITM比 QETM更加精确 ,而提取到的 QWITM的电路参数的合理性也证明了这一点 .在此基础上计算了阻性频率 f R,并简单介绍 f R

关 键 词：resonant tunneling diode microwave equivalent-circuit quantum well injection transit resistive frequency 

分 类 号：TN312.2[电子电信—物理电子学]