单晶硅衬底材料中的消光衍射  

Forbidden Reflections in the Single Crystal Si Substrate

作　　者：黄代绘[1] 李卫[2] 冯良桓[2] 朱居木[2] 

机构地区：[1]西南交通大学理学院,成都610031 [2]四川大学材料科学与工程学院,成都610064

出　　处：《Journal of Semiconductors》2004年第10期1269-1272,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :5 0 0 760 3 0 )~~

摘　　要：在经典衍射理论中 ,Si(2 0 0 ) ,Si(2 2 2 )等 4 n+2面的反射是消光的 ,但在单晶硅或硅基材料中 ,常发现 Si(2 0 0 ) ,Si(2 2 2 )的衍射 .考虑非谐效应和电子云反对称分布的贡献 ,分别计算了 Si(2 0 0 ) ,Si(2 2 2 )消光衍射的相对强度 ,并用 XRD测试手段进行了验证 .结果表明 ,理论与实验值基本符合 .在室温下 ,Si(2 0 0 ) ,Si(2 2 2 )衍射主要是因为反对称的电子云分布所致 .同时 ,强调了 Si(2 0 0 ) ,Si(2 2 2 )衍射在In the conventional theory of X-ray diffraction, th e 4n+2 reflections are forbidden such as Si(200) and Si(222) reflection.Howe ver,these sorts of the forbidden reflections are observed in single crystal Si o r Si-based materials.When the anharmonic contribution to the temperature factor and the antisymmetric bonding charge distribution are taken into account,the re lative intensities of the forbidden (200) and (222) reflections are calculated,r espectively.It is found that the calculated values are in agreement with the obs erved values by using XRD technique.The results also indicate that forbidden (20 0) and (222) reflections can occur mainly for the antisymmetric charge density d istribution at room temperature.And the applications of forbidden reflections ar e emphasized in the XRD analysis.

关 键 词：硅基材料 Si(200)衍射 Si(222)衍射 

分 类 号：TN304.12[电子电信—物理电子学]