60keV质子辐照对TiNi记忆合金薄膜马氏体相变的影响  

Influence of 60keV proton irradiation on the transformation behavior of a TiNi shape memory alloy thin film

作　　者：王治国[1] 祖小涛[1] 雷雨[1] 莫华强[1] 傅永庆 

机构地区：[1]电子科技大学应用物理系,四川成都610054 [2]Department of Engineering, University of Cambridge, Trumpington Street

出　　处：《强激光与粒子束》2004年第11期1473-1476,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金(10175042)资助课题

摘　　要：　利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜,利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入(辐照)薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响,结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降,而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H+离子注入形成的氢化物是引起相变点的变化的主要因素。In this work, TiNi shape memory alloy films on oxidized single crystal Si substrate were successfully prepared by co-sputtering of TiNi target with a separated Ti target. The transformation behavior was investigated by differential scanning calorimeter (DSC) and in-situ XRD. 60 keV H^+ ions implantation shifted martensite transformation start/finish temperature M_s/M_f and austenite transformation start/finish temperature A_s/A_f to lower temperature, whereas H^+ implantation had little effect on the R-phase transformation temperatures R_s and R_f. glance incidence XRD results showed that titanium hydride formed after H^+ implantation .The change of transformation temperatures can be attributed to the formation of hydride.

关 键 词：TiNi形状记忆合金薄膜 H离子注入 马氏体相变 示差扫描量热仪 X射线衍射 

分 类 号：TG139.6[一般工业技术—材料科学与工程]