蓝绿激光作用下沉积态Ag_(11)In_(12)Sb_(51)Te_(26)相变薄膜的晶化性能  

Properties of Crystallization for As-Deposited Ag_(11)In_(12)Sb_(51)Te_(26) Phase Change Thin Films Irradiation upon Blue Green Laser

作　　者：张广军[1] 顾冬红[1] 干福熹[1] 

机构地区：[1]中国科学院上海光学精密机械研究所高密度光存储实验室,上海201800

出　　处：《中国激光》2004年第11期1351-1355,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金(60207005);上海市科技启明星计划(03QG14057)资助项目。

摘　　要：用反射率对比度来衡量晶化程度,分别探讨了脉宽为500ns,100ns,60ns的蓝绿激光(514nm)作用下沉积态Ag11In12Sb51Te26相变薄膜的晶化性能,表明Ag11In12Sb51Te26相变薄膜在蓝绿激光下可具有较高的晶化速度。对比分析了热致晶化后的Ag11In12Sb51Te26薄膜在514nm处的反射率对比度,结果表明激光晶化和热致晶化后薄膜的反射率对比度有明显差别,分别为8%和192%。The properties of blue green laser induced crystallization for as deposited Ag 11 In 12 Sb 51 Te 26 phase change thin films irradiation are studied by measuring the reflectivity contrast at 500, 100 and 60 ns pulse duration. The results show that Ag 11 In 12 Sb 51 Te 26 phase change thin films irradiated by blue green laser have high crystallization speed. The reflectivity contrast of thermal treatment Ag 11 In 12 Sb 51 Te 26 phase change thin films is also investigated, and the results show that there is a different in the reflectivity contrast, which is 8% and 19 2%, for laser induced and thermal treatment films, respectively.

关 键 词：薄膜 相变薄膜 蓝绿激光 Ag11In12Sb51Te26 晶化 反射率对比度 

分 类 号：O484.41[理学—固体物理]