脉冲激光作用下碘掺杂的AgBr-T颗粒中光电子衰减特性  

Photoelectron Decay Characteristics in Iodide-Doped AgBr-T Grains Excited by a Pulse Laser

作　　者：杨少鹏[1] 傅广生[1] 刘荣鹃[1] 代秀红[1] 李晓苇[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《中国激光》2004年第11期1378-1380,共3页Chinese Journal of Lasers

基　　金：国家自然科学基金(10354001);教育部科学技术研究重点项目(01011);河北省高校博士基金(B2003119);河北大学博士基金(2003B01)资助课题。

摘　　要：利用微弱信号的微波吸收相敏检测技术,在短脉冲激光作用下,测量了在不同碘化物掺杂方式和掺杂量下的AgBrT颗粒中自由光电子和浅束缚光电子随时间的衰减曲线,根据测得的衰减曲线得到了不同条件下的自由光电子寿命(FLT)、自由光电子衰减时间(FDT)及浅束缚光电子衰减时间(SDT)值,通过比较这些值分析了碘化物在AgBrT颗粒中的作用和碘化物对AgBrT颗粒的感光性能的影响。详细分析了碘含量小于、大于以及等于3%的吸收信号和色散信号曲线,讨论了曲线上各个区的影响因素。The curves of free photoelectron and shallow trapped photoelectron decaying with time in different doping method and doping amount of iodide are measured under the action of short pulsed laser by using microwave absorption phase sensitive technique, which is used to measure faint signal. According to the curve, the lifetime values and the decay time values of free photoelectron and shallow trapped photoelectron under different condition are obtained. By comparing these values, the work of iodide in AgBr T grain and its influence on the photographic property of AgBr T are analyzed. In addition, the absorbed and dispersive signals with the iodide amount less than, more than, and equal 3% are analyzed in detail, and the influencing factors on every section are discussed.

关 键 词：光电子学 短脉冲激光 光电子寿命 微波吸收 碘掺杂 电子陷阱 

分 类 号：TQ59[化学工程—精细化工]