低相噪体效应二极管的研制  

Development of Ku_Band Low Phase Noise Gunn Diodes

作　　者：张晓[1] 李贤臣 刘萍[1] 

机构地区：[1]南京电子器件研究所,南京210016 [2]七一五二一部队542厂,河南新乡453002

出　　处：《半导体技术》2004年第12期41-44,共4页Semiconductor Technology

摘　　要：体效应振荡器相位噪声主要取决于体效应管的噪声。文中介绍了低相噪体效应管的设计与工艺实现,制作出了一种与设计基本一致的Ku波段低相噪体效应二极管。该器件在Ku波段高端输出功率大于150mW、转换效率大于5%。将其安装于低相噪介质振荡器中,在保证一定的输出功率的情况下,相位噪声小于-98dBc/Hz/5kHz,-10dB谱线宽度小于200Hz。The properties of phase noise of Gunn oscillators are determined by the characters ofthe noise of Gunn diodes. This paper describes the design and realization of GaAs Gunn diodes forlow phase noise. At Ku band, we have manufactured the devices which agree with our design results.The minimum output power is more than 150 mW at Ku high band with a test cavity, and the effi-ciency of conversion is more than 5%. And in an applications cavity, when meeting some level ofpower, the best level of low phase noise oscillator is -98dBc/Hz/5kHz. And at -10dB, the width ofspectrum is less than 200 Hz.

关 键 词：体效应 相位噪声 振荡器 砷化镓 

分 类 号：TN387.1[电子电信—物理电子学]