HgCdTe探测器应力的多重晶X射线衍射分析  

Multiple crystal X-ray diffraction analysis of stress in HgCdTe photovoltaic detector

作　　者：孙涛[1] 王庆学[1] 陈文桥[1] 梁晋穗[1] 陈兴国[1] 胡晓宁[1] 李言谨[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理所功能材料器件中心,上海200083

出　　处：《功能材料与器件学报》2004年第3期307-312,共6页Journal of Functional Materials and Devices

摘　　要：HgCdTe光伏探测器的钝化介质膜应力常常限制其低温性能,利用高分辨率多重晶X射线衍射仪中的三重晶衍射技术和倒易空间作图对钝化介质膜应力进行了表征,发现在较高溅射能量下沉积的钝化膜,由于应力的作用,HgCdTe晶片出现弯曲,并有大量镶嵌结构,而在较低的溅射能量下和热蒸发下沉积的钝化膜,晶面未出现明显弯曲,可获得较低应力的钝化介质层。The low-temperature performance of HgCdTe photovoltaic detector is limited by the stress of wafer. In this paper, the stress of HgCdTe passivated by CdTe and ZnS was investigated byusing triple crystal x-ray diffraction and reciprocal space mapping, it is found that under the high sputtering power the wafer is bended due to induced stress, and the mosaic structure is observed. Thelow-stress film is achieved by low-power sputtering and thermal evaporation.

关 键 词：HGCDTE 光伏探测器 应力 钝化 三重晶X射线衍射 倒易空间作图 

分 类 号：TN2[电子电信—物理电子学]