离子束增强沉积VO_2多晶薄膜的相变模拟  

Phase transition simulation of the VO_2 film prepared by ion beam enhanced deposition method

作　　者：袁宁一[1] 李金华[1] 李格[2] 

机构地区：[1]江苏工业学院信息科学系,常州213016 [2]江苏工业学院计算机工程系,常州213016

出　　处：《功能材料与器件学报》2004年第3期332-336,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助课题(No.60277019;No.10175027)

摘　　要：用多晶薄膜晶粒-晶界两相结构模型,考虑晶格畸变和载流子对晶界势垒区的隧穿机制,在10～100oC范围内,模拟了离子束增强沉积(IBED)VO2多晶薄膜的相变。模拟结果显示,由于晶粒中间隙位置氩的存在,使VO2晶格畸变,导致了薄膜中部分晶粒的相变温度降低,使IBEDVO2薄膜在48oC开始由半导体相向金属相转变。Based on the model of the two phases of grain and grain boundary, the resistivity of the VO2 film prepared by Ion Beam Enhanced Deposition (IBED) method was studied. The lattice distortionhypothesis and grain boundary tunneling are supposed to simulate the resistivity change of the VO2 polycrystalline film with temperature. Due to the present of Ar+in interstitial site of VO2 lattice, some grains begin the semiconductor-to-metal phase transition at 48oC lower than the phase transi-tion temperature of VO2 single crystal.

关 键 词：VO2 多晶薄膜 离子束增强沉积 晶格畸变 晶界隧穿 相变 模拟 

分 类 号：O484[理学—固体物理] TB43[理学—物理]