中波碲镉汞边缘接触不对称MIS结构的低频噪声  

Low frequency noise mechanism of medium wave HgCdTe with asymmetrical MIS structure

作　　者：张燕[1] 方家熊[1] 

机构地区：[1]传感技术国家重点实验室,中国科学院上海技术物理研究所,上海200083

出　　处：《功能材料与器件学报》2004年第3期391-394,共4页Journal of Functional Materials and Devices

基　　金：上海市光科技专项基金项目(No.022261024)

摘　　要：对两种不同结构的中波碲镉汞光导红外探测器件的噪声进行了测量,发现叠层结构器件的低频噪声比具有简单结构器件的大。针对叠层结构,提出了用来分析噪声的边缘接触不对称MIS结构模型。分析表明,叠层电极下的碲镉汞表面在偏置电压作用下,容易出现耗尽层是低频噪声增加的主要原因。The low frequency noises of two types of HgCdTe medium wave photoconductive infrareddetectors were measured and analyzed. The noise of detectors with contact overlap structure is larger than that of conventional ones. An edge contacts asymmetrical metal insulator-semiconductor modelis put forward to explain the noise character. The larger noise of overlap structure is mainly causedby the depletion layer, which will appear under overlap electrodes when the detectors are biased.

关 键 词：碲镉汞 探测器 叠层结构 低频噪声 红外探测器件 

分 类 号：TN21[电子电信—物理电子学]