Pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser  

作　　者：田信宁 闫平 柳强 巩马理 廖云 

机构地区：[1]CenterforPhotonicsandElectronics,DepartmentofPrecisionInstruments,TsinghuaUniversity,Beijing100084 [2]UniversityofElectronicScienceandTechnologyofChina,Chengdu610054

出　　处：《Chinese Optics Letters》2004年第9期536-537,共2页中国光学快报（英文版）

摘　　要：A pre-pumped passively Q-switched Nd:YAG/Cr: YAG microchip laser is demonstrated with a peak power of 7.5 kW at pulse repetition rate of serveral kilohertzs. The full-width at half-maximum (FWHM) is 734 ps, and the pulse energy is 5.5 μJ with a fundamental spatial mode. In this system, the pre-pumped microchip laser of Nd: YAG/Cr: YAG wafer which is bonded through the thermal-bonding technique has achieved a time jitter value of 12 μs and a Q-switched amplitude instability of 1.26% (1δ) through the pre-pumped modulation technique.A pre-pumped passively Q-switched Nd:YAG/Cr: YAG microchip laser is demonstrated with a peak power of 7.5 kW at pulse repetition rate of serveral kilohertzs. The full-width at half-maximum (FWHM) is 734 ps, and the pulse energy is 5.5 μJ with a fundamental spatial mode. In this system, the pre-pumped microchip laser of Nd: YAG/Cr: YAG wafer which is bonded through the thermal-bonding technique has achieved a time jitter value of 12 μs and a Q-switched amplitude instability of 1.26% (1δ) through the pre-pumped modulation technique.

关 键 词：Chromium compounds Optically pumped lasers Q switched lasers Timing jitter Ultrashort pulses 

分 类 号：TN24[电子电信—物理电子学]