Effect of growth interruption and strain buffer layer on PL performance of AlGaAs/GaAs/InGaAs quantum well for 1065 nm wavelength lasers  

作　　者：PANJiaoqing HUANGBaibiao ZHANGXiaoyang YUEJinshun YUYongqin WEIJiyong 

机构地区：[1]StateKeyLaboratoryofCrystalMaterials,ShandongUniveristy,Jinan250100,China [2]ShandongHuaguangOptoelectronicsCo.Ltd,Jinan250010.China

出　　处：《Rare Metals》2004年第1期64-67,共4页稀有金属（英文版）

摘　　要：Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).

关 键 词：AlGaAs/GaAs/InGaAs strained quantum well MOCVD strain buffer layer growthinterruption laser diodes 

分 类 号：TN312[电子电信—物理电子学]