Evidence of New Structure Formation in C-doped SiO_2 after 4.57 MeV/u Pb Ion Irradiation  

作　　者：WangZhiguang ZhaoZhiming SongYin JinYunfan ZhangChonghong LiuJie SunYoumei A.Benyagoub M.Toulemonde F.Levesque H.Takahashi T.Shibayama N.Sakagushi 

机构地区：[1]不详 [2]CIRIL,CEA-CNRS-ISMRA,BP5133,14070CaenCedex05,France. [3]CARET,HokkaidoUniversity,Kita-ku,Kita-13,nishi-8,Sapporo060-8628,Japan.

出　　处：《近代物理研究所和兰州重离子加速器实验室年报：英文版》2003年第1期56-56,共1页IMP & HIRFL Annual Report

基　　金：SupportedbyNSFC(No.10125522,10175084)theChineseAcademyofSciences(Xi-Bu-Zhi-Guang).

摘　　要：Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations

关 键 词：结构编队 二氧化硅 碳杂质 铅离子 放射性 相位变换 

分 类 号：O571.3[理学—粒子物理与原子核物理] O571.2[理学—物理]